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dc.contributor.authorHu, S. G.en
dc.contributor.authorLiu, Y.en
dc.contributor.authorLiu, Z.en
dc.contributor.authorYu, Q.en
dc.contributor.authorDeng, L. J.en
dc.contributor.authorYin, Y.en
dc.contributor.authorChen, Tupeien
dc.contributor.authorHosaka, Sumioen
dc.identifier.citationHu, S. G., Liu, Y., Chen, T., Liu, Z., Yu, Q., Deng, L. J., Yin, Y.,& Hosaka, S. (2012). Realization of transient memory-loss with NiO-based resistive switching device. Applied physics A, 109(2), 349-352.en
dc.description.abstractA resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.en
dc.relation.ispartofseriesApplied physics Aen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleRealization of transient memory-loss with NiO-based resistive switching deviceen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
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