Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99029
Title: Realization of transient memory-loss with NiO-based resistive switching device
Authors: Hu, S. G.
Liu, Y.
Liu, Z.
Yu, Q.
Deng, L. J.
Yin, Y.
Chen, Tupei
Hosaka, Sumio
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Hu, S. G., Liu, Y., Chen, T., Liu, Z., Yu, Q., Deng, L. J., Yin, Y.,& Hosaka, S. (2012). Realization of transient memory-loss with NiO-based resistive switching device. Applied physics A, 109(2), 349-352.
Series/Report no.: Applied physics A
Abstract: A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.
URI: https://hdl.handle.net/10356/99029
http://hdl.handle.net/10220/12539
DOI: 10.1007/s00339-012-7179-9
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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