Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99045
Title: Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell
Authors: Oo, Than Zaw
Chandra, R. Devi
Yantara, Natalia
Prabhakar, Rajiv Ramanujam
Wong, Lydia Helena
Mathews, Nripan
Mhaisalkar, Subodh Gautam
Issue Date: 2012
Source: Oo, T. Z., Chandra, R. D., Yantara, N., Prabhakar, R. R., Wong, L. H., Mathews, N., et al. (2012). Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell. Organic Electronics, 13(5), 870-874.
Series/Report no.: Organic electronics
Abstract: Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/WO3/Ag was employed. For comparison, an identical device using a sol–gel derived TiOx electron extracting layer was also fabricated. Increased short-circuit density (Jsc) and open-circuit voltage (Voc) were generated in the devices with ZTO layer in comparison to the ones with TiOx layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices.
URI: https://hdl.handle.net/10356/99045
http://hdl.handle.net/10220/17238
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2012.01.011
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:ERI@N Journal Articles
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