Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99076
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dc.contributor.authorOo, Than Z.en
dc.contributor.authorMathews, Nripanen
dc.contributor.authorXing, Guichuanen
dc.contributor.authorWu, Boen
dc.contributor.authorXing, Bengangen
dc.contributor.authorWong, Lydia Helenaen
dc.contributor.authorSum, Tze Chienen
dc.contributor.authorMhaisalkar, Subodh Gautamen
dc.date.accessioned2013-11-01T02:45:43Zen
dc.date.accessioned2019-12-06T20:02:56Z-
dc.date.available2013-11-01T02:45:43Zen
dc.date.available2019-12-06T20:02:56Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationOo, T. Z., Mathews, N., Xing, G., Wu, B., Xing, B., Wong, L. H., et al. (2012). Ultrafine gold nanowire networks as plasmonic antennae in organic photovoltaics. The journal of physical chemistry C, 116(10), 6453-6458.en
dc.identifier.urihttps://hdl.handle.net/10356/99076-
dc.description.abstractSolution-processed ultrafine gold nanowires (Au-NWs) have been exploited as plasmonic antennae in organic P3HT:PCBM photovoltaic cells. The careful reduction of the spacer layer thickness which allows the evanescent field to be extended into the photoactive layer and the geometry of the Au-NWs bands which favors the enhanced scattering collectively result in an increased short-circuit current density by 23.2%. The exact nature of the plasmonic effect in Au-NWs incorporated P3HT system and the critical role played by the spacer layer were studied through optical and time-resolved photoluminescence spectroscopy. The improved photocurrent in the Au-NWs integrated devices is due to an enhanced absorption in the photoactive layer which is contributed from an increased plasmon excitation field and far-field scattering of Au-NWs.en
dc.language.isoenen
dc.relation.ispartofseriesThe journal of physical chemistry Cen
dc.subjectDRNTU::Science::Chemistry::Physical chemistryen
dc.titleUltrafine gold nanowire networks as plasmonic antennae in organic photovoltaicsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1021/jp2099637en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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