Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99090
Title: The shuttle nanoelectromechanical nonvolatile memory
Authors: Pott, Vincent
Chua, Geng Li
Vaddi, Ramesh
Tsai, Julius Ming-Lin
Kim, Tony Tae-Hyoung
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Pott, V., Chua, G. L., Vaddi, R., Tsai, J. M.-L., & Kim, T. T. (2012). The Shuttle Nanoelectromechanical Nonvolatile Memory. IEEE Transactions on Electron Devices, 59(4), 1137-1143.
Series/Report no.: IEEE transactions on electron devices
Abstract: Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable states. This electrode, called the shuttle, has no mechanical anchors and commutes between two positions. It is guided inside an insulator pod. Adhesion forces between the shuttle and fixed electrodes serve to hold the shuttle in stable positions. Smooth metal layers give strong Van der Waals stiction between two surfaces in contact. Memory detection is obtained by probing the conductance between two fixed contacts; the shuttle serves as a switchable open/short electrode. Electromechanical contacts have an ideally large resistance ratio between on and off levels. At microscale, gravity is found to be negligible compared with adhesion forces, which motivates the anchorless design for high-temperature data storage. The model proposed is based on charge induction over the surface of metal electrodes and is validated by finite-element method. Kinematic equations and energy transfers of the shuttle device are explored. Due to its unique anchorless design, the scalability of the anchorless shuttle memory is found to be excellent.
URI: https://hdl.handle.net/10356/99090
http://hdl.handle.net/10220/13480
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2181517
Rights: © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/TED.2011.2181517].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
The shuttle nanoelectromechanical nonvolatile memory .pdf6.75 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.