Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99109
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dc.contributor.authorLee, Pooi Seeen
dc.contributor.authorSingh, Nandanen
dc.date.accessioned2013-08-02T04:33:42Zen
dc.date.accessioned2019-12-06T20:03:29Z-
dc.date.available2013-08-02T04:33:42Zen
dc.date.available2019-12-06T20:03:29Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.urihttps://hdl.handle.net/10356/99109-
dc.description.abstractThis paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance.en
dc.language.isoenen
dc.titleAugmented one dimensional nanostructured sensor elementsen
dc.typeConference Paperen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.conferenceSensors (2012 : Taipei, Taiwan)en
dc.identifier.doi10.1109/ICSENS.2012.6411431en
item.fulltextNo Fulltext-
item.grantfulltextnone-
Appears in Collections:MSE Conference Papers

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