Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99123
Title: Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
Authors: Tan, Chuan Seng
Lim, Dau Fatt
Peng, Lan
Li, Hong Yu
Issue Date: 2012
Abstract: Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization.
URI: https://hdl.handle.net/10356/99123
http://hdl.handle.net/10220/12805
DOI: 10.1109/LTB-3D.2012.6238046
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.