Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99123
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTan, Chuan Sengen
dc.contributor.authorLim, Dau Fatten
dc.contributor.authorPeng, Lanen
dc.contributor.authorLi, Hong Yuen
dc.date.accessioned2013-08-01T06:07:20Zen
dc.date.accessioned2019-12-06T20:03:37Z-
dc.date.available2013-08-01T06:07:20Zen
dc.date.available2019-12-06T20:03:37Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.urihttps://hdl.handle.net/10356/99123-
dc.description.abstractEmail Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization.en
dc.language.isoenen
dc.titlePassivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realizationen
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceIEEE International Workshop on Low Temperature Bonding for 3D Integration (3rd : 2012 : Tokyo, Japan)en
dc.identifier.doi10.1109/LTB-3D.2012.6238046en
item.grantfulltextnone-
item.fulltextNo Fulltext-
Appears in Collections:EEE Conference Papers

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.