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|Title:||High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate||Authors:||Lee, Chun Wei
Raman Pillai, Suresh Kumar
Li, Chang Ming
Chan-Park, Mary B.
|Issue Date:||2012||Source:||Lee, C. W., Raman Pillai, S. K., Luan, X., Wang, Y., Li, C. M., & Chan-Park, M. B. (2012). High-Performance Inkjet Printed Carbon Nanotube Thin Film Transistors with High-k HfO2 Dielectric on Plastic Substrate. Small, 8(19), 2941-2947.||Series/Report no.:||Small||Abstract:||Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics.||URI:||https://hdl.handle.net/10356/99135
|ISSN:||1613-6810||DOI:||10.1002/smll.201200041||Rights:||© 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||SCBE Journal Articles|
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