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Title: High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
Authors: Lee, Chun Wei
Raman Pillai, Suresh Kumar
Luan, Xuena
Wang, Yilei
Li, Chang Ming
Chan-Park, Mary B.
Issue Date: 2012
Source: Lee, C. W., Raman Pillai, S. K., Luan, X., Wang, Y., Li, C. M., & Chan-Park, M. B. (2012). High-Performance Inkjet Printed Carbon Nanotube Thin Film Transistors with High-k HfO2 Dielectric on Plastic Substrate. Small, 8(19), 2941-2947.
Series/Report no.: Small
Abstract: Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics.
ISSN: 1613-6810
DOI: 10.1002/smll.201200041
Rights: © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SCBE Journal Articles

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