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https://hdl.handle.net/10356/99135
Title: | High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate | Authors: | Lee, Chun Wei Raman Pillai, Suresh Kumar Luan, Xuena Wang, Yilei Li, Chang Ming Chan-Park, Mary B. |
Issue Date: | 2012 | Source: | Lee, C. W., Raman Pillai, S. K., Luan, X., Wang, Y., Li, C. M., & Chan-Park, M. B. (2012). High-Performance Inkjet Printed Carbon Nanotube Thin Film Transistors with High-k HfO2 Dielectric on Plastic Substrate. Small, 8(19), 2941-2947. | Series/Report no.: | Small | Abstract: | Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics. | URI: | https://hdl.handle.net/10356/99135 http://hdl.handle.net/10220/10395 |
ISSN: | 1613-6810 | DOI: | 10.1002/smll.201200041 | Rights: | © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | SCBE Journal Articles |
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