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Title: Charge injection at carbon nanotube-SiO2 interface
Authors: Ong, Hock Guan
Cheah, Jun Wei
Chen, Lang
TangTang, Hosea
Xu, Yanping
Li, Bing
Zhang, Hua
Li, Lain-Jong
Wang, Junling
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2008
Source: Ong, H. G., Cheah, J. W., Chen, L., TangTang, H., Xu, Y., Li, B., et al. (2008). Charge injection at carbon nanotube-SiO2 interface. Applied Physics Letters, 93(9), 093509.
Series/Report no.: Applied physics letters
Abstract: Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube-SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface.
DOI: 10.1063/1.2978249
Rights: © 2008 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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