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Title: Memory effects in the charge response of lightly doped La2−x Sr x CuO4
Authors: Popović, Dragana
Panagopoulos, Christos
Raičević, I.
Sasagawa, T.
Keywords: DRNTU::Science::Physics::Electricity and magnetism
Issue Date: 2012
Source: Raičević, I., Popović, D., Panagopoulos, C., & Sasagawa, T. (2012). Memory effects in the charge response of lightly doped La2−x Sr x CuO4. Journal of superconductivity and novel magnetism, 25(5), 1239-1242.
Series/Report no.: Journal of superconductivity and novel magnetism
Abstract: The in-plane magnetoresistance (MR) of a single crystal La1.97Sr0.03CuO4 has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory, and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes.
DOI: 10.1007/s10948-012-1542-0
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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