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Title: Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief
Authors: Ghosh, Kaushik
Zhang, Jiye
Zhang, Lin
Dong, Yuanwei
Li, Hong Yu
Tan, Cher Ming
Xia, Guangrui
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Ghosh, K., Zhang, J., Zhang, L., Dong, Y., Li, H., Tan, C. M., Xia, G.,& Tan, C. S. (2012). Integration of Low-κ Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief. Applied Physics Express, 5(12), 126601-.
Series/Report no.: Applied physics express
Abstract: Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermomechanical stress by replacing the conventional liner (silicon dioxide) with a low-κ liner (carbon-doped silicon dioxide) is studied. By micro-Raman analysis, it is observed that the biaxial stress in silicon at the immediate vicinity of Cu-TSV is relieved by 29–45% with a low-κ liner due to its smaller elastic modulus.
DOI: 10.1143/APEX.5.126601
Rights: © 2012 The Japan Society of Applied Physics (JSAP).
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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