Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99379
Title: A ZnO driven silicon cantilever for nanoscale actuation
Authors: Yuan, Yanhui
Du, Hejun
Wang, Peihong
Issue Date: 2012
Source: Yuan, Y., Du, H., & Wang, P. (2012). A ZnO Driven Silicon Cantilever for Nanoscale Actuation. Advanced Materials Research, 486, 23-26.
Series/Report no.: Advanced materials research
Abstract: A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level.
URI: https://hdl.handle.net/10356/99379
http://hdl.handle.net/10220/10723
ISSN: 1662-8985
DOI: 10.4028/www.scientific.net/AMR.486.23
Rights: © 2012 Trans Tech Publications, Switzerland.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

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