Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy

Abstract

We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. High growth rate accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and reduces the defect density. With increasing GaN buffer thickness, FWHM of GaN(002) XRD peak and dislocation density decrease. Highest electron mobilities of 1350 and 4290 cm2/V·s were measured at RT and 90 K, respectively. Submicron gate devices exhibited good pinch-off characteristics with a maximum drain current (IDmax) of 768 mA/mm at Vg= +1 V and a maximum extrinsic transconductance (gmmax) of 190 mS/mm at VD= 6 V.