Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99411
Title: Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy
Authors: Dharmarasu, Nethaji
Radhakrishnan, K.
Agrawal, M.
Ravikiran, Lingaparthi
Arulkumaran, Subramaniam
Lee, Kenneth E.
Ing, Ng Geok
Issue Date: 2012
Source: Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Ravikiran, L., Arulkumaran, S., Lee, K. E.,& Ing, N. G. (2012). Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy. Applied Physics Express, 5(9), 091003-.
Series/Report no.: Applied physics express
Abstract: We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. High growth rate accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and reduces the defect density. With increasing GaN buffer thickness, FWHM of GaN(002) XRD peak and dislocation density decrease. Highest electron mobilities of 1350 and 4290 cm2/V·s were measured at RT and 90 K, respectively. Submicron gate devices exhibited good pinch-off characteristics with a maximum drain current (IDmax) of 768 mA/mm at Vg= +1 V and a maximum extrinsic transconductance (gmmax) of 190 mS/mm at VD= 6 V.
URI: https://hdl.handle.net/10356/99411
http://hdl.handle.net/10220/12599
DOI: 10.1143/APEX.5.091003
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations 20

14
Updated on Mar 5, 2021

PublonsTM
Citations 10

22
Updated on Mar 8, 2021

Page view(s) 10

683
Updated on Jul 3, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.