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Title: Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory
Authors: Vaddi, Ramesh
Pott, Vincent
Lin, Julius Tsai Ming
Kim, Tony Tae-Hyoung
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems
Issue Date: 2012
Source: Vaddi, R., Pott, V., Lin, J. T. M., & Kim, T. T. (2012). Design, Modeling and Simulation of an Anchorless Nano-Electro-Mechanical Nonvolatile Memory. 2012 International Conference on Solid-State and Integrated Circuit, 32, pp.12-17.
Abstract: Non Volatile Memories (NVMs) based on a storage layer, like FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation and modeling details of a new NVM based on nano-electromechanical memory (NEM) cell having two stable mechanical positions and actuated by electrostatic forces. Permanent retention is obtained by adhesion forces only, eliminating the leakage observed in all types of storage layers. First part of the work focus on the introduction of single cell of NEM based NVM structure and operation. The second part of the work focus on NEM based NVM modeling and behavior implementation with Verilog-A compact modeling and testing in Cadence environment. The results verify the correct functionality and scalability of the new NEM cell. With the anchorless shuttle, the design is highly eased and scalable, compared to standard anchor based NEM structures.
Rights: © 2012 IACSIT Press. This paper was published in International Conference on Solid-State and Integrated Circuit (ICSIC 2012) and is made available as an electronic reprint (preprint) with permission of IACSIT Press. The paper can be found at the following official URL: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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