Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99612
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dc.contributor.authorTay, Beng Kangen
dc.contributor.authorZhao, Z. W.en
dc.contributor.authorLei, W.en
dc.contributor.authorZhang, X. B.en
dc.contributor.authorChen, J. S.en
dc.date.accessioned2013-09-24T06:49:13Zen
dc.date.accessioned2019-12-06T20:09:30Z-
dc.date.available2013-09-24T06:49:13Zen
dc.date.available2019-12-06T20:09:30Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationZhao, Z. W., Lei, W., Zhang, X. B., Tay, B. K., & Chen, J. S. (2012). Growth and Characterization of Bamboo-Shaped Carbon Nanotubes Using Nanocluster-Assembled ZnO:Co Thin Films as Catalyst. Journal of Nanoscience and Nanotechnology, 12(8), 6583-6587(5).en
dc.identifier.urihttps://hdl.handle.net/10356/99612-
dc.description.abstractBamboo-shaped carbon nanotubes (CNTs) had been successfully fabricated by a plasma enhanced chemical vapor deposition method, in which nanocluster-assembled ZnO:Co thin film was used as catalyst. It was found that bamboo-shaped CNTs were generally grown in a direction perpendicularly to the substrate surface with the tops of CNTs dominated by the droplet-like catalyst covered by the carbon layer. The diameter of CNTs was ranged from 20–50 nm. High resolution of TEM image showed that the typical CNT had a multi-walled structure with an inner core presented. The ordered graphite layers were inclined to an axis of CNT about 18° and the interlayer space of a CNT was about 0.35 nm. Two peaks in Raman spectrum at 1586 cm−1 and 1372 cm−1 were identified as G-band and D-band for graphite, respectively. The results showed that catalyst based on ZnO:Co thin films could be used for the growth of CNTs with bamboo-shaped structure.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of nanoscience and nanotechnologyen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleGrowth and characterization of bamboo-shaped carbon nanotubes using nanocluster-assembled ZnO:Co thin films as catalysten
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1166/jnn.2012.5427en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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