Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99658
Title: Tailoring optical properties of silicon nanowires by Au nanostructure decorations : enhanced Raman scattering and photodetection
Authors: Chen, Renjie
Li, Dehui
Hu, Hailong
Zhao, Yanyuan
Wang, Ying
Wong, Nancy
Wang, Shijie
Zhang, Yi
Hu, Jun
Shen, Zexiang
Xiong, Qihua
Issue Date: 2012
Source: Chen, R., Li, D., Hu, H., Zhao, Y., Wang, Y., Wong, N., et al. (2012). Tailoring Optical Properties of Silicon Nanowires by Au Nanostructure Decorations: Enhanced Raman Scattering and Photodetection. The Journal of Physical Chemistry C, 116(7), 4416-4422.
Series/Report no.: The journal of physical chemistry C
Abstract: Metallic nanoparticles (NPs) decorated semiconductor nanowires (NWs) heterostructures show significant promise in enhanced optical and opto-electrical properties due to the coupling of surface plasmon to nanowires. Here, we demonstrate a galvanic displacement based strategy to achieve in situ nucleation of Au nanoparticles and then postgrowth into higher order Au nanostructures such as dimers, nanorods, and nanoprisms along the same Si nanowires (SiNWs). The presence of Au nanostructures significantly enhances the optical properties of nanowires. Particularly, a 24 times enhancement of Si Raman scattering signal was achieved with a Au dimer decoration. A Au nanorod aligned in parallel along nanowire strongly enhances the anisotropy of Si Raman scattering, with more than 28 times stronger signal under parallel polarization than that under perpendicular polarization, demonstrating for the first time the surface plasmon enhanced antenna effect. In addition, we demonstrate that surface plasmon enhances photocurrent of SiNW by almost 100%, which is higher than previous reports. Our studies show that SiNWs decorated with metallic nanostructures by in situ galvanic displacement exhibit significant promise toward high efficiency photodetection and light harvesting applications.
URI: https://hdl.handle.net/10356/99658
http://hdl.handle.net/10220/17234
DOI: 10.1021/jp210198u
Schools: School of Physical and Mathematical Sciences 
School of Electrical and Electronic Engineering 
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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