Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/99664
Title: | High energy efficient ultra-low voltage SRAM design : device, circuit, and architecture | Authors: | Kim, Tony Tae-Hyoung Wang, Bo Do, Anh Tuan |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Kim, T. T., Wang, B., & Do, A. T. (2012). High energy efficient ultra-low voltage SRAM design: Device, circuit, and architecture. 2012 International SoC Design Conference (ISOCC 2012). | Conference: | International SoC Design Conference (2012 : Jeju, Korea) | Abstract: | High energy efficient ultra-low voltage SRAMs play a key role in many emerging ultra-low power applications. However, design of SRAMs for reliable ultra-low voltage operation is challenging due to various problems. In this paper, we explore various ultra-low voltage SRAM design techniques for improving energy efficiency. Effect of MTCMOS on energy efficiency improvement, circuit techniques for ultra-low voltage operation, and architectural considerations will be presented. | URI: | https://hdl.handle.net/10356/99664 http://hdl.handle.net/10220/13601 |
DOI: | 10.1109/ISOCC.2012.6407117 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Conference Papers |
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