Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99744
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dc.contributor.authorWang, J.en
dc.contributor.authorNeaton, J. B.en
dc.contributor.authorZheng, H.en
dc.contributor.authorNagarajan, V.en
dc.contributor.authorOgale, S. B.en
dc.contributor.authorLiu, B.en
dc.contributor.authorViehland, D.en
dc.contributor.authorSchlom, D. G.en
dc.contributor.authorWaghmare, U. V.en
dc.contributor.authorSpaldin, N. A.en
dc.contributor.authorRabe, K. M.en
dc.contributor.authorWuttig, M.en
dc.contributor.authorRamesh, R.en
dc.date.accessioned2011-12-13T03:29:39Zen
dc.date.accessioned2019-12-06T20:10:57Z-
dc.date.available2011-12-13T03:29:39Zen
dc.date.available2019-12-06T20:10:57Z-
dc.date.copyright2003en
dc.date.issued2003en
dc.identifier.citationWang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., & et al. (2003). Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures. Science, 299(5613), 1719-1722.en
dc.identifier.urihttps://hdl.handle.net/10356/99744-
dc.identifier.urihttp://hdl.handle.net/10220/7391en
dc.description.abstractEnhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3 is reported. Structure analysis indicates that the crystal structure is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50-60μC/cm2) almost an order of magnitude higher than that of the bulk (6.1μC/cm2). The observed enhancement is corroborated by first-principles calculations and found to originate from large relative displacements of the Bi, Fe, and O sublattices. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an exciting opportunity to create and implement novel thin film devices that actively couple the magnetic and ferroelectric order parameters.en
dc.language.isoenen
dc.relation.ispartofseriesScienceen
dc.rights© 2003 American Association for the Advancement of Science  This is the author created version of a work that has been peer reviewed and accepted for publication by Science, American Association for the Advancement of Science.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: http://dx.doi.org/10.1126/science.1080615en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin filmsen
dc.titleEpitaxial BiFeO3 multiferroic thin film heterostructuresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1126/science.1080615en
dc.description.versionAccepted versionen
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