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https://hdl.handle.net/10356/99769
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tang, Xiaohong | en |
dc.contributor.author | Mei, Ting | en |
dc.contributor.author | Wang, Yixin | en |
dc.contributor.author | Djie, Hery Susanto | en |
dc.contributor.author | Chin, Mee Koy | en |
dc.contributor.author | Nie, Dong | en |
dc.date.accessioned | 2010-09-07T04:47:18Z | en |
dc.date.accessioned | 2019-12-06T20:11:14Z | - |
dc.date.available | 2010-09-07T04:47:18Z | en |
dc.date.available | 2019-12-06T20:11:14Z | - |
dc.date.copyright | 2006 | en |
dc.date.issued | 2006 | en |
dc.identifier.citation | Mei, T., Tang, X., Wang, Y., Djie, H. S., Chin, M. K., & Nie, D. (2006). Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure. Journal of applied physics, 100, 1-3. | en |
dc.identifier.issn | 0021-8979 | en |
dc.identifier.uri | https://hdl.handle.net/10356/99769 | - |
dc.description.abstract | Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable. | en |
dc.format.extent | 3 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Journal of applied physics | en |
dc.rights | Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i4/p046103_s1?isAuthorized=no | en |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials | en |
dc.title | Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.contributor.organization | A*STAR Institute for Infocomm Research | en |
dc.identifier.doi | 10.1063/1.2227267 | en |
dc.description.version | Published version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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Argon plasma exposure enhanced intermixing in an undoped InGaAsP InP quantum-well structure.pdf | 245.21 kB | Adobe PDF | View/Open |
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