Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/99778
Title: | The effect of secondary electrons on emission | Authors: | Li, Yuan Zhao, Suling Xu, Zheng Zhang, Fujun Zhao, Dewei Song, Jinglu Huang, Jinzhao Yan, Guang Kong, Chao Xu, Xurong |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2013 | Source: | Li, Y., Zhao, S., Xu, Z., Zhang, F., Zhao, D., Song, J., et al. (2013). The effect of secondary electrons on emission. Journal of luminescence, 138, 89-93. | Series/Report no.: | Journal of luminescence | Abstract: | The effect of secondary electrons on emission is studied by modelling the electrons behaviours in multi-layers, including electron injection, transportation, multiplication, and emission. The dielectric constant model and carrier mobility model are presented to describe the voltage distribution in multi-layers for the non-current injection and current injection respectively. After injection, the electrons are accelerated in SiO2, where they collide with the electrons, generating secondary electrons, consequently contributing to emission. A multiplying factor M is introduced to describe the secondary electrons multiplication in certain electrical field strength. The prediction was further proved by comparing two groups of devices with and without the accelerating layer: ITO/MEH-PPV/SiO2/Al and ITO/MEH-PPV/BCP/Al. The current avalanche observed in current–illumination experiment is a proof of the existence and contribution of secondary electrons. | URI: | https://hdl.handle.net/10356/99778 http://hdl.handle.net/10220/17547 |
ISSN: | 0022-2313 | DOI: | 10.1016/j.jlumin.2013.01.030 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
SCOPUSTM
Citations
50
1
Updated on Mar 21, 2025
Web of ScienceTM
Citations
50
1
Updated on Oct 26, 2023
Page view(s) 50
632
Updated on Mar 24, 2025
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.