Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99778
Title: The effect of secondary electrons on emission
Authors: Li, Yuan
Zhao, Suling
Xu, Zheng
Zhang, Fujun
Zhao, Dewei
Song, Jinglu
Huang, Jinzhao
Yan, Guang
Kong, Chao
Xu, Xurong
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Li, Y., Zhao, S., Xu, Z., Zhang, F., Zhao, D., Song, J., et al. (2013). The effect of secondary electrons on emission. Journal of luminescence, 138, 89-93.
Series/Report no.: Journal of luminescence
Abstract: The effect of secondary electrons on emission is studied by modelling the electrons behaviours in multi-layers, including electron injection, transportation, multiplication, and emission. The dielectric constant model and carrier mobility model are presented to describe the voltage distribution in multi-layers for the non-current injection and current injection respectively. After injection, the electrons are accelerated in SiO2, where they collide with the electrons, generating secondary electrons, consequently contributing to emission. A multiplying factor M is introduced to describe the secondary electrons multiplication in certain electrical field strength. The prediction was further proved by comparing two groups of devices with and without the accelerating layer: ITO/MEH-PPV/SiO2/Al and ITO/MEH-PPV/BCP/Al. The current avalanche observed in current–illumination experiment is a proof of the existence and contribution of secondary electrons.
URI: https://hdl.handle.net/10356/99778
http://hdl.handle.net/10220/17547
ISSN: 0022-2313
DOI: 10.1016/j.jlumin.2013.01.030
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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