Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99823
Title: Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
Authors: Leck, Kheng Swee
Divayana, Yoga
Zhao, Dewei
Yang, Xuyong
Abiyasa, Agus Putu
Mutlugun, Evren
Gao, Yuan
Liu, Shuwei
Tan, Swee Tiam
Sun, Xiaowei
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Leck, K. S., Divayana, Y., Zhao, D., Yang, X., Abiyasa, A. P., Mutlugun, E., et al. (2013). Quantum dot light-emitting diode with quantum dots inside the hole transporting layers. ACS Applied materials & interfaces, 5(14), 6535-6540.
Series/Report no.: ACS applied materials & interfaces
Abstract: We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
URI: https://hdl.handle.net/10356/99823
http://hdl.handle.net/10220/17230
DOI: 10.1021/am400903c
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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