Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99833
Title: Photoconductivity from carbon nanotube transistors activated by photosensitive polymers
Authors: Shi, Yumeng
Dong, Xiaochen
Tantang, Hosea
Weng, Cheng-Hui
Chen, Fuming
Lee, Chun Wei
Zhang, Keke
Chen, Yuan
Wang, Junling
Li, Lain-Jong
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2008
Source: Shi, Y., Dong, X., Tantang, H., Weng, C.-H., Chen, F., Lee, C., & et al. (2008). Photoconductivity from carbon nanotube transistors activated by photosensitive polymers. Journal of physical chemistry C, 112 (46), 18201-18206.
Series/Report no.: Journal of physical chemistry C
Abstract: We perform electrostatic force microscopic measurements to reveal the mechanisms of the photoresponse from polymer-coated carbon nanotube transistors, where the effective gating due to the trapping of photogenerated electrons at SiO2 dielectric surfaces is found dominant. The distant photoresponse and the unique spatial-dependent photoconductivity for polymer-coated SWNT-network transistors are explored for the first time. The photoconductivity depends strongly on the polarity of the applied voltage across the contact pads, which suggests that a secondary effect (electrical field dependent exciton dissociation) needs to be included in addition to the photoinduced electrostatic gating. These spatial photoresponses are generally observed for various substrates and polymers. These results suggest a new strategy for achieving remote light detection, position sensors, or antenna devices.
URI: https://hdl.handle.net/10356/99833
http://hdl.handle.net/10220/7421
DOI: 10.1021/jp805315x
Rights: © 2008 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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