Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99843
Title: Effects of Si(001) surface amorphization on ErSi2 thin film
Authors: Pey, Kin Leong
Lee, Pooi See
Tan, Eu Jin
Kon, M. L.
Zhang, Y. W.
Wang, W. D.
Chi, Dong Zhi
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2005
Source: Tan, E. J., Kon, M. L., Pey, K. L., Lee, P. S., Zhang, Y. W., Wang, W. D., et al. (2006). Effects of Si(001) surface amorphization on ErSi2 thin film. Thin Solid Films, 504(1-2), 157-160.
Series/Report no.: Thin solid films
Abstract: In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization.
URI: https://hdl.handle.net/10356/99843
http://hdl.handle.net/10220/10497
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.09.067
Rights: © 2005 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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