Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99910
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dc.contributor.authorWang, Youyien
dc.contributor.authorZhang, Dao Huaen
dc.contributor.authorZhang, Samen
dc.contributor.authorWee, A. T. S.en
dc.contributor.authorRamam, A.en
dc.contributor.authorChen, X. Z.en
dc.contributor.authorJin, Y. J.en
dc.contributor.authorLi, J. H.en
dc.contributor.authorLiu, C. J.en
dc.date.accessioned2013-03-05T04:19:37Zen
dc.date.accessioned2019-12-06T20:13:27Z-
dc.date.available2013-03-05T04:19:37Zen
dc.date.available2019-12-06T20:13:27Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationWang, Y., Zhang, D. H., Chen, X. Z., Jin, Y. J., Li, J. H., Liu, C. J., et al. (2012). Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation. Applied Physics Letters, 101(2), 021905-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/99910-
dc.description.abstractWe report bonding and diffusion behavior of nitrogen incorporated into InSb wafer by two-step implantation. Three nitrogen-containing regions, i.e., a surface accumulation region, a uniform region, and a tail region, were observed in the samples after post annealing. X-ray photoelectron spectroscopy measurements at different depths reveal that majority of the nitrogen forms In-N bonds in the uniform region but exists as interstitial defects in the tail region. The diffusion coefficients of nitrogen in InSb were obtained by fitting the modified Fick’s law with experimental data and the activation energy of 0.55 ± 0.04 eV extracted confirms the interstitial dominating diffusion of nitrogen in the InSb wafer.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4734507]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Science::Chemistry::Analytical chemistry::Gas analysisen
dc.titleBonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.4734507en
dc.description.versionPublished versionen
item.grantfulltextopen-
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