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https://hdl.handle.net/10356/99942| Title: | Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires | Authors: | Lu, Junpeng Sun, Cheng Zheng, Minrui Wang, Yinghui Nripan, Mathews Kan, Jeroen A. van Mhaisalkar, Subodh Gautam Sow, Chorng Haur |
Keywords: | DRNTU::Engineering::Materials::Photonics and optoelectronics materials | Issue Date: | 2012 | Source: | Lu, J., Sun, C., Zheng, M., Wang, Y., Nripan, M., Kan, J. A. V., et al. (2012). Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires. The journal of physical chemistry C, 116(41), 22015-22020. | Series/Report no.: | The journal of physical chemistry C | Abstract: | An ultrasensitive phototransistor was fabricated based on K-intercalated MoO3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both thermal-activation and photoactivation mechanisms. The promising results are expected to promote the potential of this material in nano/micro-scaled photoelectronic applications. | URI: | https://hdl.handle.net/10356/99942 http://hdl.handle.net/10220/17202 |
DOI: | 10.1021/jp305231j | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
| Appears in Collections: | MSE Journal Articles |
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