Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99942
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dc.contributor.authorLu, Junpengen
dc.contributor.authorSun, Chengen
dc.contributor.authorZheng, Minruien
dc.contributor.authorWang, Yinghuien
dc.contributor.authorNripan, Mathewsen
dc.contributor.authorKan, Jeroen A. vanen
dc.contributor.authorMhaisalkar, Subodh Gautamen
dc.contributor.authorSow, Chorng Hauren
dc.date.accessioned2013-11-01T02:22:47Zen
dc.date.accessioned2019-12-06T20:13:52Z-
dc.date.available2013-11-01T02:22:47Zen
dc.date.available2019-12-06T20:13:52Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLu, J., Sun, C., Zheng, M., Wang, Y., Nripan, M., Kan, J. A. V., et al. (2012). Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires. The journal of physical chemistry C, 116(41), 22015-22020.en
dc.identifier.urihttps://hdl.handle.net/10356/99942-
dc.description.abstractAn ultrasensitive phototransistor was fabricated based on K-intercalated MoO3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both thermal-activation and photoactivation mechanisms. The promising results are expected to promote the potential of this material in nano/micro-scaled photoelectronic applications.en
dc.language.isoenen
dc.relation.ispartofseriesThe journal of physical chemistry Cen
dc.subjectDRNTU::Engineering::Materials::Photonics and optoelectronics materialsen
dc.titleUltrasensitive phototransistor based on K-enriched MoO3 single nanowiresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1021/jp305231jen
item.fulltextNo Fulltext-
item.grantfulltextnone-
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