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dc.contributor.authorBaek, Jung Wooen
dc.contributor.authorShim, Jaewooen
dc.contributor.authorPark, Jin-Hongen
dc.contributor.authorJung, Woo-Shiken
dc.contributor.authorYu, Hyun-Yongen
dc.identifier.citationBaek, J. W., Shim, J., Park, J. H., Jung, W. S., & Yu, H. Y. (2013). Dopant Profile Model in a Shallow Germanium n+/p Junction. Journal of The Korean Physical Society, 63(10), 1855-1858.en
dc.description.abstractA challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.en
dc.relation.ispartofseriesJournal of the Korean physical societyen
dc.rights© 2013 The Korean Physical Societyen
dc.subjectDRNTU::Engineering::Mechanical engineeringen
dc.titleDopant profile model in a shallow germanium n+/p junctionen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen
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