Please use this identifier to cite or link to this item:
Title: Dopant profile model in a shallow germanium n+/p junction
Authors: Baek, Jung Woo
Shim, Jaewoo
Park, Jin-Hong
Jung, Woo-Shik
Yu, Hyun-Yong
Keywords: DRNTU::Engineering::Mechanical engineering
Issue Date: 2013
Source: Baek, J. W., Shim, J., Park, J. H., Jung, W. S., & Yu, H. Y. (2013). Dopant Profile Model in a Shallow Germanium n+/p Junction. Journal of The Korean Physical Society, 63(10), 1855-1858.
Series/Report no.: Journal of the Korean physical society
Abstract: A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.
DOI: 10.3938/jkps.63.1855
Schools: School of Mechanical and Aerospace Engineering 
Rights: © 2013 The Korean Physical Society
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

Page view(s) 50

Updated on Sep 28, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.