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    • 4H-SiC wafers studied by X-ray absorption and Raman scattering 

      Xu, Qiang; Sun, Hua Yang; Chen, Cheng; Jang, Ling-Yun; E. Rusli; Mendis, Suwan P.; Tin, Chin Che; Qiu, Zhi Ren; Wu, Zhengyun; Liu, Chee Wee; Feng, Zhe Chuan (2012)
      Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer ...