Browsing 1. Schools by Author "Foo, Siew Chuen"

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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Ye, G.; Wang, Hong; Arulkumaran, Subramaniam; Ng, Geok Ing; Hofstetter, R.; Li, Y.; Anand, M. J.; Ang, K. S.; Bryan, Maung Ye Kyaw Thu; Foo, Siew Chuen (2013)

In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is ...
Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal

Arulkumaran, Subramaniam; Ng, Geok Ing; Ranjan, Kumud; Kumar, Chandra Mohan Manoj; Foo, Siew Chuen; Ang, Kian Siong; Vicknesh, Sahmuganathan; Dolmanan, Surani Bin; Bhat, Thirumaleshwara; Tripathy, Sudhiranjan (2015)

We have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack (Ta/Si/Ti/Al/Ni/Ta) with a record-low ohmic contact resistance (Rc) ...