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    • Low temperature grown GaNAsSb : a promising material for photoconductive switch application 

      Tan, Kian Hua; Yoon, Soon Fatt; Wicaksono, Satrio; Loke, Wan Khai; Li, D. S.; Saadsaoud, N.; Tripon-Canseliet, C.; Lampin, J. F.; Decoster, D.; Chazelas, J. (2013)
      We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen ...