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    • Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement 

      Green, James E.; Loh, Wei Sun.; Marshall, Andrew R. J.; Ng, Beng Koon; Tozer, Richard C.; David, John P. R.; Soloviev, Stanislav I.; Sandvik, Peter M. (2012)
      Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication ...