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    • Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates 

      Wang, Bing; Wang, Cong; Lee, Kwang Hong; Bao, Shuyu; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen (2016)
      The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and ...