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Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure
Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure ...
Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the -conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with ...