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Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the -conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with ...
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure
Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure ...