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Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with ...
Thermal reaction of nickel and Si0.75Ge0.25 alloy
The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si0.75Ge0.25 alloy have been studied within the temperature range of 300–900 °C for forming low resistive ...