Now showing items 1-5 of 5
Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit ...
Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering ...
Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. ...
An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage
In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting ...
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal ...