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Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal ...
Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress ...