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Erbium silicidation on SiGe for advanced MOS application
Ti capping has been found to be beneficial on Er(Si1−yGey)2 formation in Ti/Er/Si1−xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be ...
Effects of Si(001) surface amorphization on ErSi2 thin film
In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The ...