Now showing items 1-3 of 3
Low-voltage organic ferroelectric field effect transistors using Langmuir–Schaefer films of poly(vinylidene fluoride-trifluororethylene)
Langmuir–Schaefer transfer was used to fabricate ultrathin films of ferroelectric copolymer, poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%), for non-volatile memory application at low operating voltage. Increasing ...
Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric
Large positive shifts of turn-on voltage Vto were observed in ferroelectric organic thin film transistor using P(VDF-TrFE) copolymer (57–43 mol%) as gate insulator during OFF to ON state sweeping. The shift of the transfer ...
Improved pentacene device characteristics with sol–gel SiO2 dielectric films
The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel ...