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Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature
Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas ...
Fabrication of graphene nanomesh by using an anodic aluminum oxide membrane as a template
Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall ...