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Modification of Ta/polymeric low-k interface by electron beam treatment
Polymeric dielectric, porous polyarylene ether (PAE), was introduced in the Cu damascene structures because of its low dielectric constant to reduce resistance-capacitance (RC) delay. One of the requirements ...
Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface
Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam ...