Now showing items 1-5 of 5
N-type behavior of ferroelectric-gate carbon nanotube network transistor
Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube ...
Work function engineering of electrodes via electropolymerization of ethylenedioxythiophenes and its derivatives
The work functions of two commonly used electrodes, Au and indium-tin-oxide (ITO), can be modified by surface-electropolymerization of ethylenedioxythiophenes (EDOT) or its derivatives. The resulting work function is tunable ...
Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles
Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. ...
Charge injection at carbon nanotube-SiO2 interface
Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic ...
Photoconductivity from carbon nanotube transistors activated by photosensitive polymers
We perform electrostatic force microscopic measurements to reveal the mechanisms of the photoresponse from polymer-coated carbon nanotube transistors, where the effective gating due to the trapping of photogenerated electrons ...