Now showing items 1-4 of 4
Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit ...
Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering ...
Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates (with 40% Ge). Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. ...
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal ...