Now showing items 1-6 of 6
Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time
Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW ...
Kinking-induced structural evolution of metal oxide nanowires into single-crystalline nanorings
We report an innovative method to fabricate single-crystalline nanorings based on the conventional vapor−liquid−solid (VLS) mechanism. The controllable formation of kinks in functional oxide nanowires (NWs) can be employed ...
Morphology control of indium germanate nanowires, nanoribbons, and hierarchical nanostructures
We report morphology controlled syntheses of indium germanate nanostructures, including nanowires, ultralong nanoribbons, and hierarchical nanostructures. Proper selection and combination of the growth conditions such as ...
Network-enhanced photoresponse time of Ge nanowire photodetectors
We demonstrated that the photoresponse time of Ge nanowire (NW) photodetectors could be greatly improved by using percolated NW networks (instead of single NW) as the active detection channels. Although the reset time for ...
Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation
The role of contact between semiconducting nanowire and metal electrodes in a single nanowire field effect transistor (NW-FET) is investigated for the sensing of different type of gases. Two different types of In2O3 nanowire ...
Room temperature CO gas sensing using Zn-doped In2O3 single nanowire field effect transistors
We demonstrate a room temperature sensing of CO gas (1–5 ppm) using high performance single Zn-doped In2O3 nanowire field effect transistors (Zn–In2O3 NW-FETs). Zn–In2O3 nanowires were grown in a horizontal CVD furnace; ...