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Effect of ion implantation on layer inversion of Ni silicided poly-Si
The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + ...
Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown ...
Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have ...