Now showing items 1-3 of 3
Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications
By combining two kinds of solution-processable two-dimensional materials, a flexible transistor array is fabricated in which MoS2 thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the ...
Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature
Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas ...
Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, ...