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Pyramidal structural defects in erbium silicide thin films
Pyramidal structural defects, 5–8 μm wide, have been discovered in thin films of epitaxial ErSi2−x formed by annealing thin Er films on Si(001) substrates at temperatures of 500–800 °C. The formation of these defects ...
Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence ...