Now showing items 1-4 of 4
Modification of Ta/polymeric low-k interface by electron beam treatment
Polymeric dielectric, porous polyarylene ether (PAE), was introduced in the Cu damascene structures because of its low dielectric constant to reduce resistance-capacitance (RC) delay. One of the requirements ...
Analytical modeling of reservoir effect on electromigration in Cu interconnects
Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the ...
Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface
Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam ...
Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test
Adhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As ...