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      Author
      Boey, Freddy Yin Chiang (3)
      Lee, Pooi See (3)
      Mhaisalkar, Subodh Gautam (3)
      Cahyadi, Tommy (2)Chen, Z. K. (2)Ng, C. M. (2)Tan, H. S. (2)Ma, Jan (1)Namdas, E. B. (1)Ng, Nathaniel (1)... View MoreDate2007 (2)2006 (1)Subject
      Engineering (3)
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      Anomalous polarization switching in organic ferroelectric field effect transistors 

      Nguyen, Chien A.; Lee, Pooi See; Ng, Nathaniel; Su, Haibin; Mhaisalkar, Subodh Gautam; Ma, Jan; Boey, Freddy Yin Chiang (2007)
      The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate ...
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      Improved pentacene device characteristics with sol–gel SiO2 dielectric films 

      Cahyadi, Tommy; Tan, H. S.; Namdas, E. B.; Mhaisalkar, Subodh Gautam; Lee, Pooi See; Chen, Z. K.; Ng, C. M.; Boey, Freddy Yin Chiang (2006)
      The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel ...
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      Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors 

      Cahyadi, Tommy; Tan, H. S.; Mhaisalkar, Subodh Gautam; Lee, Pooi See; Boey, Freddy Yin Chiang; Chen, Z. K.; Ng, C. M.; Rao, V. R.; Qi, Guojun (2007)
      The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition ...

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